Product Summary
The IS61LV12816L-10TL is a high-speed CMOS static RAM. It couples with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
Parametrics
IS61LV12816L-10TL absolute maximum ratings: (1)VDD, power supply voltage relative to GND: -0.5 to 4V; (2)terminal voltage with respect to GND: -0.5 to VDD+0.5V; (3)storage temperature: -65 to 150℃; (4)power dissipation: 1W.
Features
IS61LV12816L-10TL features: (1)High-speed access time: 8, 10 ns; (2)Operating Current: 50mA (typ.); (3)Stand by Current: 700µA (typ.); (4)TTL and CMOS compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs.
Diagrams
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![]() IS61LV12816L-10TL |
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![]() SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v |
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![]() IS61LV12816L-10TLI |
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![]() SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v |
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![]() IS61LV12816L-10TL-TR |
![]() ISSI |
![]() SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v |
![]() Data Sheet |
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![]() IS61LV12816L-10TLI-TR |
![]() ISSI |
![]() SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v |
![]() Data Sheet |
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